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Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance

Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance

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Brand Name : SILIAN

Model Number : Customized

Certification : SGS/ ISO

Place of Origin : Chongqing,China

MOQ : 50pcs

Price : Negotiable

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 20,000 pcs/month

Delivery Time : 5-8 weeks

Packaging Details : Wooden packing

Melt Point : 2040 C

Density : 3.98g/cm3

Hardness : 9 ( mohs)

Loss Tangent at 10 GHz : < 2x10-5 at A axis , <5 x10-5 at C axis

Crystal Purity : > 99.99%

Specific Heat : 0.10cal / oC

Thermal Expansion : 7.5 x10-6/ oC

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High temperature resistance, good thermal conductivity, high hardness, sapphire ingot

Product Description

Sapphire (Sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal conductivity, high hardness, infrared transmission and good chemical stability. At the same time, it is also a widely used single crystal substrate material, and it is the substrate of choice for the current blue, violet, and white light emitting diode (LED) and blue laser (LD) industries.

Technical Specification

Crystal Structure Hexagonal. a =4.758 c= 12.992
Crystallographic D spacing (1120 ) - a plane: 2.379 (1102) - r plane: 1.740
(1010) - m plane: 1.375 (1123) - n plane: 1.147 ˉ
(0001) - c plane: 2.165 (1011) - s plane: 1.961
Crystal Purity > 99.99%
Melt Point 2040 oC
Density 3.98 g/cm3
Hardness 9 ( mohs)
Thermal Expansion 7.5 (x10-6/ oC)
Specific Heat 0.10 ( cal / oC)
Thermal Conductivity, 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
Dielectric Constant ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz < 2x10-5 at A axis , <5 x10-5 at C axis
Standard Products
As - grown boules 3" dia x 50 ~ 70 mm length
ori.± 0.5o 2" dia x 50 ~ 70 mm length
30 mm dia x 150 mm length
As-cut blanks 2" dia x 0.7 mm thickness
ori.± 0.5o 1" dia x 0.7 mm thickness
Epi -polished substrates 3" dia. x 0.5 mm
C, R, A plane: ori.± 0.5o 2" dia. x 0.33 mm, 2"dia x 0.5 mm
1 or 2 sides polished 1" dia x 0.5 mm
Ra< 10 0.5" x 0.5" x 0.5 mm
10x10x0.5 mm

Application field

In the field of optical communication, sapphire crystal is used not only as a short-wavelength active device, but also as a polarizer for passive devices;

In the field of laser, sapphire is an excellent laser dielectric material (such as Ti:Al2O3, Cr:Al2O3);

in the field of superconductivity, sapphire crystal can not only make Y-series, La-series high-temperature superconducting films, but also grow new practical MgB2 High-temperature superconducting thin films (usually single crystal substrates are chemically corroded during the production of MgB2 thin films);

An important window material widely used in high-energy detection and high-power high-power lasers.

High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance


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